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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Electrically Similar to the Popular MJE15030 and MJE15031 150 VCEO(sus) 8 A Rated Collector Current No Isolating Washers Required Reduced System Cost High Current Gain-Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc * UL Recognized, File #E69369, to 3500 VRMS Isolation * Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) Proper strike and creepage distance must be provided. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Designed for general-purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. * * * * * * For Isolated Package Applications Complementary Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS Lead Temperature for Soldering Purpose Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Total Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation* @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous -- Peak RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating Test No. 1 Per Fig. 11 Test No. 2 Per Fig. 12 Test No. 3 Per Fig. 13 Symbol Symbol TJ, Tstg VISOL VCEO RJC RJA VCB VEB PD PD TL IC IB MJF15030 PNP MJF15031 COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS - 65 to + 150 CASE 221D-02 TO-220 TYPE Value 2 0.016 Order this document by MJF15030/D 4500 3500 1500 62.5 Max 36 0.29 260 150 150 3.5 8 16 NPN 2 5 VRMS Watts W/_C Watts W/_C _C/W _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJF15030 MJF15031 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS Current Gain-Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter On Voltage (IC = 1 Adc, VCE = 2 Vdc) Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc) DC Current Gain Linearity (VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP) DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 2 Vdc) (IC = 3 Adc, VCE = 2 Vdc) (IC = 4 Adc, VCE = 2 Vdc) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 10 mAdc, IB = 0) NOTES: 1. Pulse Test: Pulse Width 2. fT = hfe* ftest. 2 0.03 0.02 0.05 IC, COLLECTOR CURRENT (AMP) 0.5 0.3 0.2 0.1 10 20 1 5 3 2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.03 0.01 0.1 0.02 0.05 2 0.3 0.5 0.1 0.2 1 Figure 2. Forward Bias Safe Operating Area 3 50 70 100 150 200 5 7 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.2 0.3 WIREBOND LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT @ TC = 25C 0.5 v 300 s, Duty Cycle v 2%. dc 1 Characteristic SINGLE PULSE RJC(t) = r(t) RJC TJ(pk) - TC = P(pk) RJC(t) 5 ms 2 100 s 3 5 Figure 1. Thermal Response 10 50 20 30 t, TIME (ms) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 2 and 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Motorola Bipolar Power Transistor Device Data 100 VCEO(sus) 200 300 VCE(sat) VBE(on) Symbol ICBO ICEO IEBO hFE hFE fT 500 Min 150 30 40 40 40 20 -- -- -- -- -- 1K 2 3 Typ 2K 3K Max 0.5 10 10 10 -- -- -- -- -- -- 1 5K -- Adc Adc Adc MHz Unit Vdc Vdc Vdc 10K MJF15030 MJF15031 8 IC, COLLECTOR CURRENT (AMP) 1000 500 C, CAPACITANCE (pF) Cib (NPN) Cib (PNP) 5 200 100 50 30 20 10 1.5 Cob (NPN) Cob (PNP) 3 2 1 0 0 IC/IB = 10 TC = 25C VBE(off) = 9 V 5V 3V 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 30 50 5 7 10 VR, REVERSE VOLTAGE (VOLTS) 100 150 Figure 3. Reverse Bias Switching Safe Operating Area f T, CURRENT GAIN -- BANDWIDTH PRODUCT (MHz) 100 hfe , SMALL-SIGNAL CURRENT GAIN 100 90 Figure 4. Capacitances (PNP) 50 30 PNP 20 VCE = 10 V IC = 0.5 A TC = 25C NPN 60 50 (NPN) 10 20 10 0 0.1 0.2 0.5 1 2 5 10 5 0.5 0.7 1 2 3 5 7 10 f, FREQUENCY (MHz) IC, COLLECTOR CURRENT (AMP) Figure 5. Small-Signal Current Gain Figure 6. Current Gain -- Bandwidth Product DC CURRENT GAIN 1K 500 hFE, DC CURRENT GAIN 200 150 100 70 50 30 20 10 0.1 TJ = 150C TJ = 25C TJ = - 55C VCE = 2 V hFE, DC CURRENT GAIN 1K 500 TJ = 150C 200 100 50 TJ = 25C TJ = - 55C VCE = 2 V 20 10 0.1 0.2 0.5 1 2 5 10 0.2 IC, COLLECTOR CURRENT (AMP) 0.5 1 2 IC, COLLECTOR CURRENT (AMP) 5 10 Figure 7a. MJF15030 NPN Figure 7b. MJF15031 PNP Motorola Bipolar Power Transistor Device Data 3 MJF15030 MJF15031 "ON" VOLTAGE 1.8 V, VOLTAGE (VOLTS) TJ = 25C 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2 V VCE(sat) @ IC/IB = 20 0.2 0.5 1 2 1 0.8 VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 20 VBE(sat) @ IC/IB = 20 IC/IB = 10 1 2 5 10 0.4 0.2 0.1 IC/IB = 10 5 10 0 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8a. MJF15030 NPN Figure 8b. MJF15031 PNP 1 0.5 VCC = 80 V IC/IB = 10 TJ = 25C td (NPN, PNP) t, TIME ( s) tr (PNP) 10 5 3 2 ts (PNP) 1 0.5 tr (NPN) 0.2 0.1 0.1 tf (NPN) 0.2 0.3 0.5 1 2 5 10 tf (PNP) VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25C t, TIME ( s) 0.2 0.1 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1 2 5 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. Turn-On Times Figure 10. Turn-Off Times 4 Motorola Bipolar Power Transistor Device Data MJF15030 MJF15031 TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP CLIP 0.107" MIN LEADS 0.107" MIN LEADS HEATSINK 0.110" MIN HEATSINK HEATSINK Figure 11. Clip Mounting Position for Isolation Test Number 1 Figure 12. Clip Mounting Position for Isolation Test Number 2 Figure 13. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 14. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. Motorola Bipolar Power Transistor Device Data 5 MJF15030 MJF15031 PACKAGE DIMENSIONS -T- F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 -B- C S U H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D-02 TO-220 TYPE ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJF15030/D* MJF15030/D |
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